Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.     

牛顿第二定律实验中的误差分析

本文是通过对加速度的实验值和理论值进行比较和分析，给出误差的合理范围。     

Global stability and periodic solution of the viral dynamics

It is well known that the mathematical models provide very important information for the research of human immunodeficiency virus-type 1 and hepatitis C virus (HCV). However, the infection rate of almost all mathematical models is linear. The linearity shows the simple interaction between the T cells and the viral particles. In this paper, we consider the classical mathematical model with saturation response of the infection rate. By stability analysis we obtain sufficient conditions on the parameters for the global stability of the infected steady state and the infection-free steady state. We also obtain the conditions for the existence of an orbitally asymptotically stable periodic solution. Numerical simulations are presented to illustrate the results.     

On the limit cycles of a quintic planar vector field

This paper concerns the number and distributions of limit cycles in a Z_2-equivariant quintic planar vector field.25 limit cycles are found in this special planar polynomial system and four different configurations of these limit cycles are also given by using the methods of the bifurcation theory and the qualitative analysis of the differential equation.It can be concluded that H(5)≥25=5~2, where H(5)is the Hilbert number for quintic polynomial systems.The results obtained are useful to study the weakened 16th Hilbert problem.     

绝缘表面和气体导电与湿度的关系

湿度对绝缘体表面电导和气体电导有一定的影响，但通常在湿度传感器的研究中忽略了气体电导的贡献。本文通过特殊设计装置来区分表面电导和气体电导，并分别从实验和理论上进行了定性的研究。     

Hypersurface with Constant Main Curvature Symmetric Functions

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横向位移双曝光散斑图维纳谱的信息分布

讨论了横向位移双曝光散斑图维纳谱的信息分布，并由此导出杨氏纹图的一般表达式。讨论了条纹可见度与应变，面内转动，照明光束直径与条纹图图空间坐标的关系，指出了在条纹可见度影响下最大可见条纹数目。还讨论了散斑衬比与衍射晕的关系。     

铝酸锶铕的合成与发光的研究

本文详细报导4(SrEu)O·7Al2O3.磷光体的合成及激活剂Eu2+离子浓度、硼酸、五氧化二磷等对磷光体发光强度,发射光谱和激发光谱的影响.讨论了不同Eu2+离子之间的能量传递.测量了不同Eu2+浓度下磷光体的荧光寿命和长余辉特性.     

Single-molecule single crystals

Various approaches to the preparation and verification of single-molecule single crystals are discussed for polyethylene and poly (oxyethylene). Analytic tools are electron microscopy, electron diffraction, and differential scanning calorimetry. The main difficulty in producing a single-molecule single crystal is to keep crystals from joining during growth.     

Growth and optical properties of a new self-Q-switched laser crystal: Cr:Yb3Al5O12

Cr⁴⁺:YbAG (Cr⁴⁺:Yb₃Al₅O₁₂) crystal with a size up to Φ24 mm×30 mm was grown by the Czochralski method. In the absorption spectrum, there are two absorption bands at 939 and 969 nm, respectively, which are suitable for InGaAs diode laser pumping, and there is an absorption band at 1030 nm, which is suitable for passive Q-switched laser output at 1.03 μm. A broad emission spectrum from 970 to 1100 nm was exhibited from 940 nm wavelength pumping. This crystal is promising as a self-Q-switched laser crystal used for compact, efficient, highly stable, passive self-Q-switched thin chip solid-state lasers.